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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM Modules
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology 
    • Latest IPM Technology
    • High Voltage (HV) Die Technolog
    • Reliability & Qualification
  • About Us 
    • Our Company
    • Technical Team
    • Custom Solutions
  • Contact Us
  • Blog
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      • IPM Modules
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      • IGBT Discretes
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

All Categories - Design and manufacture semiconductor products - SHYSEMI

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[SYC150P120C4WF] 1200V 150A Trench FS IGBT chip, low Eoff, for welding & induction heating

Size(Inch): 12 Type: Fast Voltage(V): 1200 Current(A): 150 Effective Die Quantity: 410 Details: The SYC150P120C4WF is a high‑power 1200V IGBT chip with Trench FS technology. It features low Eoff, 10μs short‑circuit capability and stable performance, ideal for high‑frequency IGBT, welding and induction heating applications。

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[SYC150P120C4PF] 1200V 150A Trench FS IGBT chip, low Eoff, for welding & high‑frequency power

Size(Inch): 12 Type: Fast Voltage(V): 1200 Current(A): 150 Effective Die Quantity: 410 Details: The SYC150P120C4PF is a high‑power 1200V IGBT chip with Trench FS tech. It features low Eoff, 10μs short‑circuit ruggedness and high efficiency, ideal for welding IGBT, induction heating and HF power supplies.

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[SYC100PN65WK] 650V 100A fast IGBT chip for inverters, motor drives, and industrial power systems

Size(Inch): 6 Type: Std Voltage(V): 650 Current(A): 75 Effective Die Quantity: 168 Details: The SYC100PN65WK is a 650V 100A fast NPT IGBT chip optimized for high-efficiency motor control, inverter, UPS, and industrial power applications. Featuring low VCE(sat), fast switching performance, and 10µs short-circuit capability, this IGBT die helps reduce power loss while improving system reliability. Built with advanced Non-Punch Through (NPT) technology, ideal for power module design, industrial automation, renewable energy systems, and high-power conversion solutions.

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[SYC100PN120WHF] 1200V 100A NPT Fast IGBT chip, low Etotal, 10μs short‑circuit, for welding, heating

Size(Inch): 6 Type: Fast Voltage(V): 1200 Current(A): 100 Effective Die Quantity: 69 Details: The SYC100PN120WHF1 is a high‑current 1200V IGBT chip built on NPT tech. It features low Etotal, 10μs short‑circuit ruggedness and square RBSOA, ideal for heavy‑duty welding machine IGBT, induction heating and high‑frequency power applications.

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[SYC100P170C4WK] 1700V 100A Trench FS IGBT chip, low Vce(sat), 10μs short‑circuit, for servo drives

Size(Inch): 12 Type: Std Voltage(V): 1700 Current(A): 100 Effective Die Quantity: 560 Details: The SYC100P170C4WK is a high‑voltage 1700V IGBT chip with Trench FS tech. It features low Vce(sat), 10μs short‑circuit ruggedness and parallel capability, ideal for high‑power motor drive IGBT and servo drive inverters.

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GBJ2002 thru GBJ2010: 20A single‑phase bridge rectifier, 200–1000V, high surge, for industrial power

Package: GBJ VRRM: 200-1000 IF (AV): 20 VF: 1.1 Details: The GBJ20 series is a 20A single‑phase silicon bridge rectifier with 200–1000V ratings. It features high surge current and compact design, ideal for general rectification and SMPS.

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GBJ35005 thru GBJ3510: 35A single‑phase bridge rectifier, 50–1000V, high surge, UL‑listed

Package: GBJ VRRM: 50-1000 IF (AV): 35 VF: 1.1 Details: GBJ35 series is a 35A single‑phase silicon bridge rectifier, covering 50–1000V. It offers high surge and UL‑listed reliability, ideal for general rectification and industrial power supplies.

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[SYC100P120H4WHF] 1200V 100A Trench FS IGBT chip, low Eoff, 10μs short‑circuit, for welding machine

Size(Inch): 8 Type: Fast Voltage(V): 1200 Current(A): 100 Effective Die Quantity: 227 Details: The SYC100P120H4WHF is a high‑current 1200V IGBT chip with Trench FS tech. It features low Eoff, 10μs short‑circuit ruggedness and parallel capability, ideal for welding IGBT, induction heating and high‑frequency power supplies.

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[SYC100P120C4WK] 1200V 100A Trench FS IGBT chip, ultra‑low Vce(sat), 10μs short‑circuit, for motor

Size(Inch): 12 Type: Std Voltage(V): 1200 Current(A): 100 Effective Die Quantity: 560 Details: The SYC100P120C4WK is a high‑efficiency 1200V IGBT chip with Trench FS tech. It delivers ultra‑low Vce(sat), 10μs short‑circuit ruggedness and parallel capability, ideal for motor drive IGBT and servo drive applications.

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[MBR30200PT] 200V 30A Schottky diode, 0.83V low VF, high speed, for SMPS & freewheeling

Package: TO247-3L Voltage(V): 200 Current(A): 30 Details: The MBR30200PT is a 200V 30A Schottky diode with 0.83V low forward voltage. It offers high-speed operation and high reliability, ideal for SMPS and freewheeling circuits.

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[MBR40200PT] 200V 40A Schottky diode, 0.85V low VF, high frequency, RoHS for SMPS & freewheeling

Package: TO247-3L Voltage(V): 200 Current(A): 40 Details: The MBR40200PT is a 200V 40A Schottky diode with 0.85V forward voltage. It offers high-frequency performance and rugged design, ideal for SMPS and reverse battery protection.

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[MPRA1C65-S61] 650V 100A SiC rectifier module, negligible reverse recovery, high surge for welding

Package:SOT-227 Voltage(V): 650 Current(A): 100 Rthjc: 0.68 Details: The MPRA1C65-S61 is a 650V 100A SiC rectifier module with negligible reverse recovery. It features high surge capability and low loss, ideal for welding machines and DC charging systems (UPS).

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[MUR3060PT] 600V 30A ultrafast diode, 26ns trr, soft recovery, low VF for SMPS & inverters.

Package: TO247-3L Voltage(V): 600 Current(A): 30 Details: The MUR3060PT is a 600V 30A ultrafast recovery diode with 26ns trr. It features soft recovery and low forward voltage, ideal for PFC, inverters and motor drives.

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[MUR6020PT] 200V 60A fast recovery diode, 22ns trr, low VF, soft recovery, for SMPS & motor drives

Package: TO247-3L Voltage(V): 200 Current(A): 60 Details: The MUR6020PT is a 200V 60A fast recovery diode with 22ns recovery. It features low forward voltage and soft recovery, ideal for SMPS, inverters and motor control.

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[MUR6030PT] 300V 60A fast recovery diode, 30ns trr, low VF, soft recovery for SMPS & inverters

Package: TO247-3L Voltage(V): 300 Current(A): 60 Details: The MUR6030PT is a 300V 60A fast recovery diode with 30ns recovery. It features low forward voltage and soft recovery, ideal for SMPS, motor drives and PFC circuits.

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[MUR6060PT] 600V 60A ultrafast diode, 38ns trr, soft recovery, low VF for inverters & PFC

Package: TO247-3L Voltage(V): 600 Current(A): 60 Details: The MUR6060PT is a 600V 60A ultrafast recovery diode with 38ns recovery. It features soft recovery and low forward voltage, ideal for inverters and PFC circuits.

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[MUR8040PT] 400V 80A fast recovery diode, 35ns trr, low VF, soft recovery for inverters & PFC

Package: TO247-3L Voltage(V): 400 Current(A): 80 Details: The MUR8040PT is a 400V 80A fast recovery diode with 35ns recovery. It offers low forward voltage and soft recovery, ideal for inverters, SMPS and motor drives.

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GBJ50005 thru GBJ5010: 50A single‑phase bridge rectifier, 50–1000V, high surge, for power supplies

Package: GBJ VRRM: 50-1000 IF (AV): 50 VF: 1.1 Details: The GBJ50 series is a 50A single‑phase silicon bridge rectifier, with 50–1000V reverse voltage. High surge current, UL‑listed, ideal for AC‑DC rectification and industrial power supplies.

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GBPC35005 thru GBPC3510: 35A single-phase bridge rectifier, 50–1000V, high surge, for AC/DC convers

Package: GBPC VRRM: 50-1000 IF (AV): 400 VF: 1.1 details: GBPC35 series is a 35A single-phase silicon bridge rectifier with 50–1000V ratings. It offers high surge current and PCB-friendly design, ideal for general rectification and power supplies.

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[SYC150P120C4WK] 1200V 150A Trench FS IGBT chip, ultra‑low Vce(sat), 10μs short‑circuit, for motor

Size(Inch): 12 Type: Std Voltage(V): 1200 Current(A): 150 Effective Die Quantity: 410 Details: The SYC150P120C4WK is a high‑current 1200V IGBT chip with Trench FS tech. It offers ultra‑low Vce(sat), 10μs short‑circuit ruggedness and parallel capability, ideal for motor drive IGBT and servo drive inverters.

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    As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

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